SCTW100N65G2AG：Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
This silicon carbide Power MOSFET device has been developed using ST’s advanced and
innovative 2nd generation SiC MOSFET technology. The main features of this
product include remarkably low on-resistance per unit area and very good switching
performance. The variation of both RDS(on) and switching losses are almost
independent from junction temperature.
Key Features
- Designed for automotive applications
- Tight variation of on-resistance vs. temperature
- Very fast and robust intrinsic body diode
- Very high operating temperature capability (TJ
= 200 °C)
- Low capacitance
产品规格
应用手册
Technical Notes & Articles
用户手册
宣传册
手册
会议文章
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| SCTW100N65G2AG | HiP247 IN LINE | Tube | - | - | NEC | EAR99 | - |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| SCTW100N65G2AG | HiP247 IN LINE | Automotive | Ecopack2 | |
