The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Key Features
| Description | Version | Size |
|---|---|---|
| DS5292: High voltage fast-switching NPN power transistor | 5.0 | 241 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| ST13003 | SOT-32 | Tube | - | - | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| ST13003 | SOT-32 | Industrial | Ecopack1 | md_ot-wspc-sot32_tcot-wspc-bv77s7j.pdf md_ot-wspc-sot32_tcot-wspc-bv77s7j.xml |
