STAC150V2-350E:500W - 150V Class E HF/VHF DMOS TRANSISTOR

The STAC150V2-350E is a high voltage N-channel MOS field-effect RF power transistor especially designed for 150V Industrial RF power class E generators such as PECVD plasma sputtering, flat panel and solar cells manufacturing equipments. STAC150V2-350E benefits from the latest generation of STAC®air cavity package which exhibits a 25% lower thermal resistance compared to equivalent ceramic package.

Key Features

  • Operating frequencies up to 40.68 MHz
  • Excellent thermal stability
  • POUT = 350 W with 17 dB gain @ 40.68 MHz/150 V
  • Designed for class E operation
  • V(BR)DSS > 700 V
  • STAC air cavity packaging technology - STAC® package
  • In compliance with the 2002/95/EC1 European directive
产品规格
DescriptionVersionSize
DS9461: RF power transistor: HF/VHF/UHF RF power N-channel MOSFET1.1515 KB
HW Model & CAD Libraries
DescriptionVersionSize
STAC150V2-350E ADS model1.0355 KB
Software Development Tools
型号制造商Description
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
样片和购买
型号QuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
STAC150V2-350E100071STAC177BLoose PieceNECEAR99MOROCCO
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STAC150V2-350ESTAC177BIndustrialEcopack1
RF power transistor: HF/VHF/UHF RF power N-channel MOSFET STAC150V2-350E
RF power transistor: HF/VHF/UHF RF power N-channel MOSFET STAC150V2-350E