The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STBV32G and STBV32G-AP are supplied using halogen-free molding compound.
Key Features
| Description | Version | Size |
|---|---|---|
| DS1635: High voltage fast-switching NPN power transistor | 8.2 | 234 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| STBV32-AP | TO-92 | Tape And Reel | 0.07 | 1000 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| STBV32-AP | TO-92 | Industrial | Ecopack1 | md_sx-wspc-to-wspc-92_-wspc-spsxbv77s7w-wspc-(stx13003-ap)-wspc-wcp-wspc-ver2_signed.pdf md_sx-wspc-to-wspc-92_-wspc-spsxbv77s7w-wspc-(stx13003-ap)-wspc-wcp-wspc-ver2.xml |
