The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STBV42G and STBV42G-AP are supplied using halogen-free molding compound.
Key Features
| Description | Version | Size |
|---|---|---|
| DS1986: High voltage fast-switching NPN power transistor | 6.2 | 260 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| STBV42-AP | TO-92 | Tape And Reel | 0.051 | 1000 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| STBV42-AP | TO-92 | Industrial | Ecopack1 | md_sx-wspc-to-wspc-92_cgsxbv42s6c-wspc-(stbv42).pdf md_sx-wspc-to-wspc-92_cgsxbv42s6c-wspc-(stbv42).xml |
