STD20NF10:N-CHANNEL 100V - 0.038 OHM - 30A DPAK LOW GATE CHARGE STRIPFET II MOSFET

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

Key Features

  • Exceptional dv/dt capability
  • Application oriented characterization
产品规格
DescriptionVersionSize
DS2306: N-channel 100V - 0.038Ω - 100A - DPAK Low gate charge STripFET™ II Power MOSFET5.2324 KB
应用手册
DescriptionVersionSize
AN1703: Guidelines for using ST's MOSFET smd Packages1.3776 KB
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies1.11 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STD20NF10-------
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STD20NF10-Industrial-
N-channel 100V - 0.038Ω - 100A - DPAK Low gate charge STripFET™ II Power MOSFET STD20NF10
Guidelines for using ST's MOSFET smd Packages STD26P3LLH6
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Power MOSFET: Rg impact on applications STL8DN6LF3
ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX