STEVAL-TDR004V1:400 W / 1.6 - 54 MHz reference design using 2x SD2933

The STEVAL-TDR004V1 demonstration board is an RF broadband power amplifier intended for linear or nonlinear operation over the 1.6 to 54 MHz band, using two SD2933 gold metallized Nchannel MOS field-effect transistors. The temperature compensating biasing circuit supports class B and class AB operation.

STEVAL-TDR004V1 is designed in cooperation with Specific RF Devices (Germany).

Key Features

  • IMD at 300 WPEP < -26 dBc
  • Efficiency: 57 % - 76 %
  • Excellent thermal stability
  • Supply voltage: 48 V
  • Frequency: 1.6 - 54 MHz
  • Input power 10 W max.
  • Load mismatch: 3:1 (all phases)
  • Output power: 400 W (typ.)
产品规格
DescriptionVersionSize
DS6781: RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs1.2225 KB
DB0666: RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs2.1216 KB
Board Manufacturing Specifications
DescriptionVersionSize
PCB layout1.0145 KB
Schematic Packs
DescriptionVersionSize
Board schematic1.0349 KB
许可协议
DescriptionVersionSize
Demo products licence agreement3.222 KB
Evaluation products license agreement1.0125 KB
样片和购买
型号Core ProductUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STEVAL-TDR004V1SD293315601NECEAR99-
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STEVAL-TDR004V1CARDIndustrialEcopack2
RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs STEVAL-TDR004V1
RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs STEVAL-TDR004V1
RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs STEVAL-TDR004V1
RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs STEVAL-TDR004V1
STM8L DALI slave interface STEVAL-ILM001V1
ST-LINK/V2 in-circuit debugger/programmer for STM8 and STM32 ST-LINK-V2