STFI260N6F6：N-channel 60 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAKFP package
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Key Features
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
产品规格
应用手册
Technical Notes & Articles
用户手册
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STFI260N6F6 | I2PAKFP | Tube | - | - | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STFI260N6F6 | I2PAKFP | Industrial | Ecopack2 | |
