STGB10H60DF：Trench gate field-stop IGBT, H series 600 V, 10 A high speed
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
Key Features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
产品规格
应用手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGB10H60DF | D2PAK | Tape And Reel | 0.85 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGB10H60DF | D2PAK | Industrial | Ecopack2 | |
