STGB6M65DF2:Trench gate field-stop IGBT M series, 650 V 6 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features

  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 6 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
产品规格
DescriptionVersionSize
DS11407: Trench gate field-stop IGBT, M series 650 V, 6 A low loss3.0985 KB
应用手册
DescriptionVersionSize
AN4694: EMC design guides for motor control applications1.02 MB
AN4544: IGBT datasheet tutorial1.12 MB
HW Model & CAD Libraries
DescriptionVersionSize
STGB6M65DF2 PSpice model1.02 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-IGBT-FINDERSTIGBT product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STGB6M65DF2D2PAKTape And Reel--NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STGB6M65DF2D2PAKIndustrialEcopack2
Trench gate field-stop IGBT, M series 650 V, 6 A low loss STGB6M65DF2
EMC design guides for motor control applications STGIF7CH60TS-L
IGBT datasheet tutorial STGW25S120DF3
IGBT datasheet tutorial STGB6M65DF2
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