STGF10M65DF2:Trench gate field-stop IGBT M series, 650 V 10 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features

  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 10 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
产品规格
DescriptionVersionSize
DS10848: Trench gate field-stop IGBT, M series 650 V, 10 A low loss6.0563 KB
应用手册
DescriptionVersionSize
AN4694: EMC design guides for motor control applications1.02 MB
AN4544: IGBT datasheet tutorial1.12 MB
HW Model & CAD Libraries
DescriptionVersionSize
STGF10M65DF2 PSpice model1.02 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-IGBT-FINDERSTIGBT product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STGF10M65DF2TO-220FPTube11000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STGF10M65DF2TO-220FPIndustrialEcopack2
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