STGFW20H65FB：Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)
= 1.55 V (typ.) @ IC
= 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Lead free package
产品规格
应用手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGFW20H65FB | TO-3PF | Tube | 2.1 | 1000 | NEC | EAR99 | KOREA (south) |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGFW20H65FB | TO-3PF | Industrial | Ecopack1 | |
