STGW40H65DFB-4：Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
This device is an IGBT developed using an advanced proprietary trench gate field-stop
structure. The device is part of the new HB series of IGBTs, which represents an optimum
compromise between conduction and switching loss to maximize the efficiency of any
frequency converter. A faster switching event can be achieved by the Kelvin pin, which
separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution
result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- Kelvin pin
- Minimized tail current
- Low saturation voltage: VCE(sat)
= 1.6 V (typ.) @ IC
= 40 A
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
产品规格
应用手册
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGW40H65DFB-4 | TO247-4 | Tube | - | - | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGW40H65DFB-4 | TO247-4 | Industrial | Ecopack2 | |
