STGW60H65DF：60 A, 650 V field stop trench gate IGBT with very fast diode
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
Key Features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 μs short-circuit withstand time
- Very fast soft recovery antiparallel diode
- Lead free package
产品规格
应用手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGW60H65DF | TO-247 | Tube | 3.95 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGW60H65DF | TO-247 | Industrial | Ecopack2 | |
