STGWT30H60DFB:Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
产品规格
DescriptionVersionSize
DS10467: Trench gate field-stop IGBT, HB series 600 V, 30 A high speed3.01 MB
应用手册
DescriptionVersionSize
AN4694: EMC design guides for motor control applications1.02 MB
AN4544: IGBT datasheet tutorial1.12 MB
HW Model & CAD Libraries
DescriptionVersionSize
STGWT30H60DFB PSpice model1.09 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-IGBT-FINDERSTIGBT product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STGWT30H60DFBTO-3PTube2.351000NECEAR99KOREA (south)
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STGWT30H60DFBTO-3PIndustrialEcopack1
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed STGW30H60DFB
EMC design guides for motor control applications STGIF7CH60TS-L
IGBT datasheet tutorial STGW25S120DF3
IGBT datasheet tutorial STGWT30H60DFB
Very low drop voltage regulators with inhibit KFXX