STGWT30HP65FB:Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 1.55 V (typ., IC = 30 A)
  • Safe paralleling
  • Tight parameter distribution
  • Low thermal resistance
  • Co-packed diode for protection
产品规格
DescriptionVersionSize
DS11375: Trench gate field-stop IGBT, HB series 650 V, 30 A high speed2.0921 KB
应用手册
DescriptionVersionSize
AN4694: EMC design guides for motor control applications1.02 MB
AN4544: IGBT datasheet tutorial1.12 MB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-IGBT-FINDERSTIGBT product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STGWT30HP65FBTO-3PTube--NECEAR99KOREA (south)
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STGWT30HP65FBTO-3PIndustrialEcopack1
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed STGWT30HP65FB
EMC design guides for motor control applications STGIF7CH60TS-L
IGBT datasheet tutorial STGW25S120DF3
Very low drop voltage regulators with inhibit KFXX