STGWT60H60DLFB：Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the improved "H" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)
= 1.6 V (typ.) @ IC
= 60 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Low VF
soft recovery co-packaged diode
- Lead free package
产品规格
应用手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGWT60H60DLFB | TO-3P | Tube | 4.1 | 1000 | NEC | EAR99 | KOREA (south) |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGWT60H60DLFB | TO-3P | Industrial | Ecopack1 | |
