STGWT60V60DF：Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
These devices are IGBTs developed using an advanced proprietary trench gate field-stop
structure. These devices are part of the V series of IGBTs, which represents an optimum
compromise between conduction and switching losses to maximize the efficiency of very high
frequency converters. Furthermore, positive VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- Tail-less switching off
- VCE(sat)
= 1.85 V (typ.) @ IC
= 60 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
产品规格
应用手册
Technical Notes & Articles
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGWT60V60DF | TO-3P | Tube | 4.1 | 1000 | NEC | EAR99 | KOREA (south) |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGWT60V60DF | TO-3P | Industrial | Ecopack1 | |
