STH320N4F6-6:N-channel 40 V, 1.1 mOhm typ., 200 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-6 package
These devices are N-channel Power MOSFETs developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages.
Key Features
- Standard threshold drive
- 100% avalanche tested
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
型号 | 制造商 | Description |
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ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|
STH320N4F6-6 | H2PAK-6 | Tape And Reel | - | - | NEC | EAR99 | CHINA |
质量和可靠性