STL60P4LLF6：P-channel -40 V, 0.0115 Ohm typ., -60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
产品规格
DescriptionVersionSize
DS10556: P-channel 40 V, 0.0115 Ω typ., 60 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package2.0881 KB
应用手册
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STL60P4LLF6 PSpice model1.08 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STL60P4LLF6PowerFLAT 5x6Tape And Reel1.251000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STL60P4LLF6PowerFLAT 5x6IndustrialEcopack2
P-channel 40 V, 0.0115 Ω typ., 60 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package STL60P4LLF6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STL60P4LLF6
Very low drop voltage regulators with inhibit KFXX
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