STL8DN6LF3：Automotive-grade dual N-channel 60 V, 22.5 mOhm typ., 7.8 A STripFET F3 Power MOSFET in PowerFLAT 5x6 double island package
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.
Key Features
- Designed for automotive applications and AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C junction temperature
- 100% avalanche rated
- Wettable flank package
产品规格
应用手册
Technical Notes & Articles
用户手册
宣传册
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STL8DN6LF3 | PowerFLAT 5x6 double island | Tape And Reel | - | - | NEC | EAR99 | CHINA |
质量和可靠性
