STL8DN6LF6AG:Automotive-grade dual N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 double island package
This device is a dual N-channel Power MOSFET developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting Power MOSFET exhibits very low
RDS(on) in all packages.
Key Features
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
型号 | 制造商 | Description |
---|
ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|
STL8DN6LF6AG | PowerFLAT 5x6 double island WF | Tape And Reel | - | - | NEC | EAR99 | CHINA |
质量和可靠性