The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN93003, its complementary PNP transistor.
Key Features
| Description | Version | Size |
|---|---|---|
| DS4732: High voltage fast-switching NPN power transistor | 3.1 | 266 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| STN83003 | SOT-223 | Tape And Reel | 0.262 | 1000 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| STN83003 | SOT-223 | Industrial | Ecopack2 | md_ll-wspc-sot-wspc-223_csll-wspc-iv3236f.pdf md_ll-wspc-sot-wspc-223_csll-wspc-iv3236f.xml |
