STP315N10F7:Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Designed for automotive applications and AEC-Q101 qualified
  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss /Ciss ratio for EMI immunity
  • High avalanche ruggedness
产品规格
DescriptionVersionSize
DS9967: Automotive-grade N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package4.0559 KB
应用手册
DescriptionVersionSize
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4789: Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance1.11006 KB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies1.11 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STP315N10F7 PSpice model2.09 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STP315N10F7TO-220ABTube3.51000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STP315N10F7TO-220ABAutomotiveEcopack1md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_x3dz-wspc-od0ka52.pdf
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_x3dz-wspc-od0ka52.xml
Automotive-grade N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package STP315N10F7
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance STH310N10F7-6
Power MOSFET: Rg impact on applications STL8DN6LF3
ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STP315N10F7
Very low drop voltage regulators with inhibit KFXX
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_x3dz-wspc-od0ka52.pdf STP315N10F7
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_x3dz-wspc-od0ka52.xml STP315N10F7