STPSC12H065-Y：Automotive 650 V power Schottky silicon carbide diode
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Key Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- PPAP capable
- ECOPACK®
2 compliant component
产品规格
应用手册
Technical Notes & Articles
HW Model & CAD Libraries
宣传册
会议文章
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-DIODE-FINDER | ST | Diode product finder application for Android and iOS |
样片和购买
| 型号 | Unit Price (US$)
* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STPSC12H065DY | 2.485 | 100 | TO-220AC | Tube | 175 | NEC | EAR99 | CHINA |
质量和可靠性
