STPSC2006CW:600 V power Schottky silicon-carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Particularly suitable in PFC boost diode function
产品规格
DescriptionVersionSize
DS7121: 600 V power Schottky silicon carbide diode1.075 KB
应用手册
DescriptionVersionSize
AN4242: New generation of 650 V SiC diodes1.22 MB
Technical Notes & Articles
DescriptionVersionSize
TN1173: Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches4.0330 KB
HW Model & CAD Libraries
DescriptionVersionSize
Silicon-carbide Schottky diode PSpice models (.lib & .olb)5.0180 KB
简报
DescriptionVersionSize
ST products and solutions for solar energy5.12 MB
Silicon-carbide diode product presentation1.01022 KB
宣传册
DescriptionVersionSize
Automotive-grade SiC diodes with very low forward voltage drop1.01 MB
Silicon-carbide diodes1.01 MB
选型指南
DescriptionVersionSize
Diodes and rectifiers selection guide2.0815 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Products and solutions for solar energy1.01 MB
会议文章
DescriptionVersionSize
Wide bandgap materials: revolution in automotive power electronics1.0792 KB
Software Development Tools
型号制造商Description
ST-DIODE-FINDERSTDiode product finder application for Android and iOS
样片和购买
型号Unit Price (US$) *QuantityPackagePacking TypeJunction Temperature (°C) (max)ECCN (EU)ECCN (US)Country of Origin
STPSC2006CW4.201100TO-247Tube175NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STPSC2006CWTO-247IndustrialEcopack2md_lw-wspc-to-wspc-247_hslw-wspc-dc051y4_vers2_sdm_signed.pdf
md_lw-wspc-to-wspc-247_hslw-wspc-dc051y4_vers2_sdm.xml
600 V power Schottky silicon carbide diode STPSC2006CW
New generation of 650 V SiC diodes STTH8R06
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches FLC21
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
STEVAL-ISV006V2: solar battery charger using the SPV1040 STEVAL-ISV006V2
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STTH15S12
Very low drop voltage regulators with inhibit KFXX
Description of UFDFPN5, UFDFPN8 and WFDFPN8 for STMicroelectronics EEPROMs and recommendations for use M95080-DRE
Spice model tutorial for Power MOSFETs SCTWA50N120
md_lw-wspc-to-wspc-247_hslw-wspc-dc051y4_vers2_sdm_signed.pdf STPSC2006CW
md_lw-wspc-to-wspc-247_hslw-wspc-dc051y4_vers2_sdm.xml STPSC2006CW