STPSC40065C：650 V power Schottky silicon-carbide diode
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Dedicated to PFC applications
2 compliant component
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