STPSC6H065:650 V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • Insulated package TO-220AC Ins:
    • Insulated voltage: 2500 V rms
    • Typical package capacitance: 7 pF
产品规格
DescriptionVersionSize
DS9064: 650 V power Schottky silicon carbide diode7.0215 KB
应用手册
DescriptionVersionSize
AN4242: New generation of 650 V SiC diodes1.22 MB
Technical Notes & Articles
DescriptionVersionSize
TN1173: Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches4.0330 KB
HW Model & CAD Libraries
DescriptionVersionSize
Silicon-carbide Schottky diode PSpice models (.lib & .olb)5.0180 KB
简报
DescriptionVersionSize
Silicon-carbide diode product presentation1.01022 KB
宣传册
DescriptionVersionSize
Automotive-grade SiC diodes with very low forward voltage drop1.01 MB
Silicon-carbide diodes1.01 MB
选型指南
DescriptionVersionSize
Diodes and rectifiers selection guide2.0815 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Products and solutions for solar energy1.01 MB
会议文章
DescriptionVersionSize
Wide bandgap materials: revolution in automotive power electronics1.0792 KB
Software Development Tools
型号制造商Description
ST-DIODE-FINDERSTDiode product finder application for Android and iOS
样片和购买
型号Unit Price (US$) *QuantityPackagePacking TypeJunction Temperature (°C) (max)ECCN (EU)ECCN (US)Country of Origin
STPSC6H065DI1.28100TO-220AC InsTube175NECEAR99CHINA
STPSC6H065G-TR1.14100D2PAKTape And Reel175NECEAR99CHINA
STPSC6H065D1.08100TO-220ACTube175NECEAR99CHINA
STPSC6H065B-TR1.04100DPAKTape And Reel175NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STPSC6H065DITO-220AC InsIndustrialEcopack2md_ur-wspc-do-wspc-220-wspc-ab-wspc-isol_hzur-wspc-2c091y4_vers2_sdm_signed.pdf
md_ur-wspc-do-wspc-220-wspc-ab-wspc-isol_hzur-wspc-2c091y4_vers2_sdm.xml
STPSC6H065G-TRD2PAKIndustrialEcopack1 (*)md_d2-wspc-d2pak_asd2-wspc-2c091y4.pdf
md_d2-wspc-d2pak_asd2-wspc-2c091y4.xml
STPSC6H065DTO-220ACIndustrialEcopack2md_dk-wspc-do-wspc-220_bsdk-wspc-2c091y4.pdf
md_dk-wspc-do-wspc-220_bsdk-wspc-2c091y4.xml
STPSC6H065B-TRDPAKIndustrialEcopack1md_dp-wspc-to-wspc-252-wspc-dpak_-wspc-azdp-wspc-2c091y4-wspc-lock-wspc-.pdf
md_dp-wspc-to-wspc-252-wspc-dpak_-wspc-azdp-wspc-2c091y4-wspc-.xml
650 V power Schottky silicon carbide diode STPSC6H065
New generation of 650 V SiC diodes STTH8R06
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches FLC21
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Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
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Spice model tutorial for Power MOSFETs SCTWA50N120
md_ur-wspc-do-wspc-220-wspc-ab-wspc-isol_hzur-wspc-2c091y4_vers2_sdm_signed.pdf STPSC6H065
md_ur-wspc-do-wspc-220-wspc-ab-wspc-isol_hzur-wspc-2c091y4_vers2_sdm.xml STPSC6H065
md_d2-wspc-d2pak_asd2-wspc-2c091y4.pdf STPSC6H065
md_d2-wspc-d2pak_asd2-wspc-2c091y4.xml STPSC6H065
md_dk-wspc-do-wspc-220_bsdk-wspc-2c091y4.pdf STPSC6H065
md_dk-wspc-do-wspc-220_bsdk-wspc-2c091y4.xml STPSC6H065
md_dp-wspc-to-wspc-252-wspc-dpak_-wspc-azdp-wspc-2c091y4-wspc-lock-wspc-.pdf STPSC6H065
md_dp-wspc-to-wspc-252-wspc-dpak_-wspc-azdp-wspc-2c091y4-wspc-.xml STPSC6H065