STPSC8TH13TI:Dual 650 V power Schottky silicon carbide diode in series

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Suited for specific bridge-less topologies
  • High forward surge capability
  • Insulated package:
    • Capacitance: 7 pF
    • Insulated voltage: 2500 V rms
产品规格
DescriptionVersionSize
DS9696: Dual 650 V power Schottky silicon carbide diode in series3.0270 KB
应用手册
DescriptionVersionSize
AN4242: New generation of 650 V SiC diodes1.22 MB
Technical Notes & Articles
DescriptionVersionSize
TN1173: Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches4.0330 KB
HW Model & CAD Libraries
DescriptionVersionSize
Silicon-carbide Schottky diode PSpice models (.lib & .olb)5.0180 KB
简报
DescriptionVersionSize
Silicon-carbide diode product presentation1.01022 KB
宣传册
DescriptionVersionSize
Automotive-grade SiC diodes with very low forward voltage drop1.01 MB
Silicon-carbide diodes1.01 MB
选型指南
DescriptionVersionSize
Diodes and rectifiers selection guide2.0815 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Products and solutions for solar energy1.01 MB
会议文章
DescriptionVersionSize
Wide bandgap materials: revolution in automotive power electronics1.0792 KB
Software Development Tools
型号制造商Description
ST-DIODE-FINDERSTDiode product finder application for Android and iOS
样片和购买
型号Unit Price (US$) *QuantityPackagePacking TypeJunction Temperature (°C) (max)ECCN (EU)ECCN (US)Country of Origin
STPSC8TH13TI3.021100TO-220AB InsTube175NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STPSC8TH13TITO-220AB InsIndustrialEcopack2md_vz-wspc-to-wspc-220-wspc-(cb415)-wspc-isol_hsvz-wspc-2k141y4_vers2_sdm_signed.pdf
md_vz-wspc-to-wspc-220-wspc-(cb415)-wspc-isol_hsvz-wspc-2k141y4_vers2_sdm.xml
Dual 650 V power Schottky silicon carbide diode in series STPSC8TH13TI
New generation of 650 V SiC diodes STTH8R06
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches FLC21
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
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Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STTH15S12
Very low drop voltage regulators with inhibit KFXX
Description of UFDFPN5, UFDFPN8 and WFDFPN8 for STMicroelectronics EEPROMs and recommendations for use M95080-DRE
Spice model tutorial for Power MOSFETs SCTWA50N120
md_vz-wspc-to-wspc-220-wspc-(cb415)-wspc-isol_hsvz-wspc-2k141y4_vers2_sdm_signed.pdf STPSC8TH13TI
md_vz-wspc-to-wspc-220-wspc-(cb415)-wspc-isol_hsvz-wspc-2k141y4_vers2_sdm.xml STPSC8TH13TI