STR2N2VH5：N-channel 20 V, 0.025 Ohm typ., 2.3 A STripFET H5 Power MOSFET in SOT-23 package
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Key Features
- Low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power loss
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STR2N2VH5 | SOT-23 | Tape And Reel | 0.489 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STR2N2VH5 | SOT-23 | Industrial | Ecopack2 | |
