STRH100N6:Rad-Hard N-Channel 60V, 40A MOSFET
This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects.This Power MOSFET is fully ESCC qualified.
Key Features
- Fast switching
- 100% avalanche tested
- Hermetic package
- 50 krad TID
- SEE radiation hardened
产品规格
Technical Notes & Articles
HW Model & CAD Libraries
选型指南
样片和购买
型号 | SMD PIN/Detailed Spec | Quality Level | EPPL | Hi-Rel Package | Lead Finish | Packing Type | Package: Product Marking | Mass (gr) | ECCN (EU) | ECCN (US) | Country of Origin |
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STRH100N6HY1 | - | Engineering Model | - | TO-254AA | Gold | Carrier Tape | STRH100N6HY1 + BeO | 10 | NEC | EAR99 | FRANCE |
STRH100N6HYT | 5205/022/02 | ESCC Flight | - | TO-254AA | Solder Dip | Carrier Tape | 520502202F + BeO | 10 | NEC | EAR99 | FRANCE |
STRH100N6HYG | 5205/022/01 | ESCC Flight | - | TO-254AA | Gold | Carrier Tape | 520502201F + BeO | 10 | NEC | EAR99 | FRANCE |
质量和可靠性
型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STRH100N6HY1 | TO254 AA EM | Industrial | N/A | |
STRH100N6HYT | TO254 AA FP | Industrial | N/A | |
STRH100N6HYG | TO254 AA FP | Industrial | N/A | |