STRH12P10：Rad-Hard P-channel 100 V, 12 A Power MOSFET
This P-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. This Power MOSFET is fully ESCC qualified.
Key Features
- Fast switching
- 100% avalanche tested
- Hermetic package
- 100 krad TID
- SEE radiation hardened
产品规格
Technical Notes & Articles
选型指南
样片和购买
| 型号 | SMD PIN/Detailed Spec | Quality Level | EPPL | Hi-Rel Package | Lead Finish | Packing Type | Package: Product Marking | Mass (gr) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STRH12P10GYG | 5205/029/01R | ESCC | - | TO-257AA | Gold | Carrier Tape | 520502901R + BeO | 10 | NEC | EAR99 | FRANCE |
| STRH12P10GYT | 5205/029/02R | ESCC | - | TO-257AA | Solder dip | Carrier Tape | 520502902R + BeO | 10 | NEC | EAR99 | FRANCE |
| STRH12P10GY1 | - | Engineer model | - | TO-257AA | Gold | Carrier Tape | STRH12P10GY1 + BeO | 10 | NEC | EAR99 | FRANCE |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STRH12P10GYG | TO257 parallel seam welding FP | Industrial | N/A | |
| STRH12P10GYT | TO257 parallel seam welding FP | Industrial | N/A | |
| STRH12P10GY1 | TO257 parallel seam welding EM | Industrial | N/A | |
