STS10N3LH5：N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET(TM); V Power MOSFET
This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
Key Features
- RDS(on)
* Qg
industry benchmark
- Very low switching gate charge
- Extremely low on-resistance RDS(on)
- Low gate drive power losses
- High avalanche ruggedness
产品规格
应用手册
用户手册
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STS10N3LH5 | SO-8 | Tape And Reel | 0.266 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
