STS8C5H30L：N-channel 30 V, 0.018 Ohm typ., 8 A, P-channel 30 V, 0.045 Ohm typ., 5 A Power MOSFET in a SO-8 package
This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ II (P-channel) and STripFET™ V (N-channel) technologies. The resulting transistors show extremely high packing density for low on-resistance and rugged avalanche characteristics.
Key Features
- Conduction losses reduced
- Switching losses reduced
- Low threshold drive
- Standard outline for easy automated surface mount assembly
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STS8C5H30L | SO-8 | Tape And Reel | - | - | NEC | EAR99 | CHINA |
质量和可靠性
