STT3P2UH7：P-channel 20 V, 0.087 Ohm typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package
This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.
Key Features
- Very low on-resistance
- Very low capacitance and gate charge
- High avalanche ruggedness
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STT3P2UH7 | SOT23-6L | Tape And Reel | 0.2 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STT3P2UH7 | SOT23-6L | Industrial | Ecopack2 | |
