STU10P6F6：P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in IPAK package

These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
产品规格
DescriptionVersionSize
DS8964: P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages5.01 MB
应用手册
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STU10P6F6 PSpice model1.08 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STU10P6F6IPAKTube0.781000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STU10P6F6IPAKIndustrialEcopack2md_ik-wspc-ipak-wspc-to-251_tlik-wspc-6p6ab63_vers2_sdm_signed.pdf
md_ik-wspc-ipak-wspc-to-251_tlik-wspc-6p6ab63_vers2_sdm.xml
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages STU10P6F6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STU10P6F6
Very low drop voltage regulators with inhibit KFXX
md_ik-wspc-ipak-wspc-to-251_tlik-wspc-6p6ab63_vers2_sdm_signed.pdf STU10P6F6
md_ik-wspc-ipak-wspc-to-251_tlik-wspc-6p6ab63_vers2_sdm.xml STU10P6F6
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