This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Key Features
| Description | Version | Size |
|---|---|---|
| DS8906: High voltage fast-switching NPN power transistor | 2.0 | 237 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| STU13005N | IPAK | Tube | - | - | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| STU13005N | IPAK | Industrial | Ecopack2 | md_ik-wspc-ipak-wspc-to-251_tsik-wspc-bv75s6f_vers2_sdm_signed.pdf md_ik-wspc-ipak-wspc-to-251_tsik-wspc-bv75s6f_vers2_sdm.xml |
