STW9N150：N-channel 1500V - 2.2Ohm - 8A - TO-247
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Key Features
- Very low on-resistance
- 100% avalanche tested
- Gate charge minimized
- Avalanche ruggedness
- High speed switching
- Very low intrinsic capacitances
产品规格
应用手册
Technical Notes & Articles
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STW9N150 | TO-247 | Tube | - | - | NEC | EAR99 | CHINA |
质量和可靠性
