The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Key Features
| Description | Version | Size |
|---|---|---|
| DS2967: High voltage fast-switching NPN power transistor | 6.1 | 310 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| STX13005 | TO-92 | Poly Bag | 0.061 | 1000 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| STX13005 | TO-92 | Industrial | Ecopack1 | md_sx-wspc-to-wspc-92_tgsx-wspc-bv75s6w.pdf md_sx-wspc-to-wspc-92_tgsx-wspc-bv75s6w.xml |
