TIP122:Complementary power Darlington transistor

The devices are manufactured in planar technology with \"base island\" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Low collector-emitter saturation voltage
  • Complementary NPN - PNP transistors
产品规格
DescriptionVersionSize
DS0854: Complementary power Darlington transistors4.2609 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
TIP122TO-220ABTube0.187500NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
TIP122TO-220ABIndustrialEcopack2md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbb01s6f.pdf
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbb01s6f.xml
Complementary power Darlington transistors TIP121
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbb01s6f.pdf TIP120
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbb01s6f.xml TIP120