TIP35CP：COMPLEMENTARY HIGH POWER TRANSISTORS
The devices are manufactured in planar technology with \"base island\" layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Key Features
- Low collector-emitter saturation voltage
- Complementary NPN-PNP transistors
产品规格
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| TIP35CP | TO-3P | Tube | 0.858 | 500 | NEC | EAR99 | KOREA (south) |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| TIP35CP | TO-3P | Industrial | Ecopack1 | |
