SSM6J213FE Small-signal MOSFET _ BDTIC 中国领先电子元器件代理商

SSM6J213FE Small-signal MOSFET

数据手册DataSheet

日文版下载(PDF:310KB)Japanese
英文版下载(PDF:220KB)English

产品概述

Polarity	P-ch
RoHS Compatible Product(s) (#)	Available
Assembly bases	日本

封装信息

Package Image
Toshiba Package Name	ES6
JEITA	SC-107C
Package Code	SOT-563
Pins	6
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Drain current	I_D	-2.6	A
Drain-Source voltage	V_DSS	-20	V
Gate-Source voltage	V_GSS	+/-8	V

产品特性

项目	符号	条件	数值	单位
Input capacitance (Typ.)	C_iss	-	290	pF
Total gate charge (Typ.)	Q_g	-	4.7	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4.5V	0.103	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=2.5V	0.133	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.8V	0.178	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.5V	0.25	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=4.5V	0.0885	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=2.5V	0.1075	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.8V	0.13	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.5V	0.151	Ω
Gate threshold voltage (Max)	V_th	-	-1.0	V
Gate threshold voltage (Min)	V_th	-	-0.3	V

订购型号

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
SSM6J213FE(TE85L,F	Japan	4000		yes

技术资料

Reliability Information	Reliability Data[May,2016]	(PDF: 160KB)
Environment Information	Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016]	(PDF: 52KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)

HN1C01FE

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