SSM6J505NU Small-signal MOSFET _ BDTIC 中国领先电子元器件代理商

SSM6J505NU Small-signal MOSFET

数据手册DataSheet

日文版下载(PDF:363KB)Japanese
英文版下载(PDF:236KB)English

产品概述

Polarity	P-ch
Generation	U-MOSⅥ
RoHS Compatible Product(s) (#)	Available
Assembly bases	日本 / 马来西亚 / 泰国

封装信息

Package Image
Toshiba Package Name	UDFN6B
Pins	6
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Drain current	I_D	-12	A
Drain-Source voltage	V_DSS	-12	V
Gate-Source voltage	V_GSS	+/-6	V

产品特性

项目	符号	条件	数值	单位
Input capacitance (Typ.)	C_iss	-	2700	pF
Total gate charge (Typ.)	Q_g	-	37.6	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4.5V	0.012	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=2.5V	0.016	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.8V	0.021	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.5V	0.030	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.2V	0.061	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=4.5V	0.009	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=2.5V	0.011	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.8V	0.013	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.5V	0.014	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.2V	0.018	Ω
Gate threshold voltage (Max)	V_th	-	-1.0	V
Gate threshold voltage (Min)	V_th	-	-0.3	V

订购型号

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
SSM6J505NU,LF(T	Thailand	3000		yes

技术资料

PSpice	PSpice Model[May,2014]	(lib: 3KB)
Reliability Information	Reliability Data[Apr,2016]	(PDF: 160KB)
Environment Information	Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016]	(PDF: 52KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)

SSM6J503NU

©1993 - 2024 BDTIC