TTB1020B Power transistor for high-speed switching applications

数据手册DataSheet
产品概述
FeatureHigh hFE / Low saturation voltage
Application ScopeHigh current switching
PolarityPNP
RoHS Compatible Product(s) (#)Available
Assembly bases中国
封装信息
Package Image
Toshiba Package NameTO-220SIS
JEITASC-67
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC-10A
Collector CurrentIC-7A
Collector CurrentICP-10A
Collector power dissipationPC30W
Collector power dissipationPC2W
Collector-Base VoltageVCBO-100V
Collector-emitter voltageVCEO-100V
产品特性
项目符号条件数值单位
DC Current Gain hFE (Max)hFE-15000-
DC Current Gain hFE (Min)hFE-2000-
Collector Emitter Saturation Voltage (Max)VCE(sat)--1.5V
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TTB1020B,S4X(SChina50yes
技术资料
Reliability InformationReliability Data[May,2016](PDF: 86KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)
TTD1415B