TTB1020B Power transistor for high-speed switching applications

DataSheet
Feature
FeatureHigh hFE / Low saturation voltage
Application ScopeHigh current switching
PolarityPNP
RoHS Compatible Product(s) (#)Available
Assembly basesChina
Package Information
Package Image
Toshiba Package NameTO-220SIS
JEITASC-67
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC-7A
Collector CurrentICP-10A
Collector power dissipationPC30W
Collector-Base VoltageVCBO-100V
Collector-emitter voltageVCEO-100V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
DC Current Gain hFE (Max)hFE-15000-
DC Current Gain hFE (Min)hFE-2000-
Collector Emitter Saturation Voltage (Max)VCE(sat)--1.5V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TTB1020B,S4X(SChina50yes
Documents
Reliability InformationReliability Data[May,2016](PDF: 86KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)
TTD1415B