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VISHAY 威世
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MOSFET
> SiHD3N50D
SiHD3N50D D Series Power MOSFET
技术特性
Optimal design
Low area specific on-resistance
Low input capacitance (Ciss)
Datasheet
SiHD3N50D
General Information
General Information
- Useful Web Links
Package Drawings
Package Information
- TO-252AA Case Outline
Pad Guidelines
Application Note 826
- RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
RC Thermal Models
SiHD_U3N50D_RC
- R-C Thermal Model Parameters
Reliability Data
Package Reliability
- Environmental and Package Testing Data for DPAK (TO-252), IPAK (HVM)
Silicon Technology Reliability
- N-Channel Accelerated Operating Life Test Result
Tape Info
90-2339-1
- Tape Drawing for TO-252 (DPAK) (T1 Method)
90-2369-x
- Tape Drawing for TO-252 (DPAK) (T4 Method)
Device Orientation
- Device Orientation for TO-252 and TO-263 (T5)
SiHD3N50D
91495
General Information
91155
Package Information
62897
Application Note 826
62897
SiHD_U3N50D_RC
91495
Package Reliability
91273
Silicon Technology Reliability
63402
90-2339-1
62897
90-2369-x
69098
Device Orientation
91477
SiHD3N50D D Series Power MOSFET
91495
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