The ADRF5130 is a high power, reflective, 0.7 GHz to 3.5 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5130 has high power handling of 43 dBm (maximum), a low insertion loss of 0.6 dB, input third-order intercept of 68 dBm (typical), and 0.1 dB compression (P0.1dB) of 46 dBm. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches.
The device comes in a RoHS compliant, compact, 24-lead, 4 mm × 4 mm LFCSP package.
Features and Benefits
43 dBm maximum operating 46.5 dBm absolute maximum rating
| RF & MicrowaveS-Parameters |
Document | note |
ADRF5130: High Power, 44 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 3.5 GHz Data Sheet (Rev. 0) | PDF 340.55 K |
Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
---|---|---|---|---|---|---|
ADRF5130BCPZ Production | 24 ld LFCSP (4x4mm w/2.7mm EP) | OTH 50 | -40 to 105C | 15.07 | 10.04 | Y |
ADRF5130BCPZ-R7 Production | 24 ld LFCSP (4x4mm w/2.7mm EP) | REEL 500 | -40 to 105C | 15.07 | 10.04 | Y |
Part Number | Description | Price | RoHS |
---|---|---|---|
ADRF5130-EVALZ | Evaluation Board | 99 | Y |