HMC-ALH382-DIE Low Noise Amplifier Chip, 57 - 65 GHz
The HMC-ALH382 is a high dynamic range, four stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 57 and 65 GHz. The HMC-ALH382 features 21 dB of small signal gain, 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
This versatile LNA is compatible with conventional die attach methods, as well as thermocompression thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Applications
- Short Haul / High Capacity Links
- Wireless LANs
- Military & Space
Features and BenefitsNoise Figure: 3.8 dBP1dB: +12 dBmGain: 21 dBSupply Voltage: +2.5V50 Ohm Matched Input/OutputDie Size: 1.55 x 0.73 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC-ALH382 Production | CHIPS OR DIE | OTH 50 | -55 to 85C | 38.07 | 30.84 | Y |
| HMC-ALH382-SX Production | CHIPS OR DIE | OTH 2 | -55 to 85C | 0 | 0 | Y |
Reference Materials
