HMC1121 4 Watt, GaAs pHEMT MMIC Power Amplifier, 5.5 GHz to 8.5 GHz
The HMC1121 is a three-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 4 W power amplifier with an integrated temperature compensated on-chip power detector that operates between 5.5 GHz and 8.5 GHz. The HMC1121 provides 28 dB of gain, 44 dBm output IP3, and 36.5 dBm of saturated output power at 30% PAE from a 7 V
power supply.
The HMC1121 exhibits excellent linearity and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification preceding the antenna.
Ideal for supporting higher volume applications, the HMC1121 is provided in a 40-lead LFCSP package.
Applications
- Point to point radios
- Point to multipoint radios
- Very small aperture terminals (VSATs) and satellite communications (SATCOMs)
- Military electronic warfare (EW) and electronic counter measures (ECM)
Features and BenefitsHigh saturated output power (PSAT): 36.5 dBm at 30% power added efficiency (PAE)High output third-order intercept (IP3): 44 dBm typicalHigh gain: 28 dB typicalHigh output power for 1 dB compression (P1dB): 36 dBm typicalTotal supply current: 2200 mA at 7 V40-lead, 6 mm × 6 mm LFCSP package: 36 mm2 | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC1121LP6GE Production | 40 ld QFN (6x6mm w/4.7mm ep) | OTH 50 | -40 to 85C | 57.2 | 47.63 | Y |
| HMC1121LP6GETR Production | 40 ld QFN (6x6mm w/4.7mm ep) | REEL 500 | -40 to 85C | 57.2 | 47.63 | Y |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| EV1HMC1121LP6G | Evaluation Board | 499 | N |
