HMC349AMS8G Hi Isolation SPDT Non-Reflective Switch, DC - 4 GHz
The HMC349AMS8G & HMC349AMS8GE are high isolation non-reflective DC to 4 GHz GaAs MESFET SPDT switches in low cost 8 lead MSOP8G surface mount packages with exposed ground paddles. The switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +34 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an "all off" state.
Applications
- Basestation Infrastructure
- MMDS & 3.5 GHz WLL
- CATV/CMTS
- Test Instrumentation
Features and Benefits- High Isolation: 70 dB @ 1 GHz
57 dB @ 2 GHz - Single Positive Control: 0/+5V
- +52 dBm Input IP3
- Non-Reflective Design
- All Off State
- Ultra Small MS8G SMT Package: 14.8 mm²
| S-Parameters |
Data Sheets
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC349AMS8GE Production | 8 ld MSOP_EP | OTH 50 | -40 to 125C | 2.94 | 1.88 | Y |
| HMC349AMS8GETR Production | 8 ld MSOP_EP | REEL 500 | -40 to 125C | 2.94 | 1.88 | Y |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| EV1HMC349AMS8G | Evaluation Board | 259.77 | N |
Reference Materials
